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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Brand Name : Toshiba

Model Number : 2SC5200-O(Q)

Place of Origin : JP

MOQ : 1pcs

Price : Email us for details

Payment Terms : T/T, Western Union

Supply Ability : 5000

Delivery Time : 1day

Packaging Details : Tray

Description : 2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Stock : 2000pcs

Shipping Method : LCL, AIR, FCL, Express

Date Code : Newest code

Shipping by : DHL/UPS/Fedex

Condition : New*Original

Warranty : 365days

Lead free : Rohs Compliant

Lead times : Immediately Shipment

Package : TO-3P-3

Mounting Style : Through Hole

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole

Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: Details
Through Hole
TO-3P-3
NPN
Single
230 V
230 V
5 V
400 mV
15 A
150 W
30 MHz
-
+ 150 C
2SC
Tray
Brand: Toshiba
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 55
DC Current Gain hFE Max: 160
Height: 26 mm
Length: 20.5 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 5.2 mm
Unit Weight: 0.239863 oz

Power Amplifier Applications

• High breakdown voltage: VCEO = 230 V (min)

• Complementary to 2SA1943

• Suitable for use in 100-W high fidelity audio amplifier’s output stage

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Specifications

  • Manufacturer: Toshiba
  • Transistor Type: NPN
  • Package Type: TO-3PL
  • Maximum Power Dissipation: 150W
  • Collector Emitter Voltage (VCEO): 230V
  • Maximum Collector Current: 15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Frequency: 30MHz
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C TJ
  • Part Status: Obsolete

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)


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